參數(shù)資料
型號(hào)： 2SA0886
英文描述： Power Device - Power Transistors - Others
中文描述： 功率器件-功率晶體管-其他
文件頁數(shù)： 1/3頁
文件大?。?/td> 81K
代理商： 2SA0886
Transistors
1
Publication date: March 2003
SJC00005BED
2SA0838 (2SA838)
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC1359
■ Features
High transfer ratio f
T
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
30
mA
Collector power dissipation
PC
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter saturation voltage
VBE
VCE
= 10 V, I
C
= 1 mA
0.7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 20 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
10
A
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 1 mA
70
220
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.1
V
Transition frequency
fT
VCB
= 10 V, I
E
= 1 mA, f = 200 MHz
150
300
MHz
Noise figure
NF
VCB = 10 V, IE = 1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Zrb
VCE = 10 V, IC = 1 mA, f = 2 MHz
22
50
Reverse transfer capacitance
Cre
VCE = 10 V, IC = 1 mA, f = 10.7 MHz
1.2
2.0
pF
(Common-emitter)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Rank
B
C
hFE
70 to 140
110 to 220
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Note) The part number in the parenthesis shows conventional part number.
相關(guān)PDF資料
PDF描述
2SA886 Power Device - Power Transistors - Others
2SB0621 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SB621 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SB0621A Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SB621A Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA0886(2SA886) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA0886 (2SA886) - PNP Transistor
2SA08860Q 功能描述:TRANS PNP HF 40VCEO 1.5A TO-126 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA0886Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126
2SA0886R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126
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