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參數(shù)資料
| 型號(hào)： | 2SA0914 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | For audio system/pli drive |
| 中文描述： | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封裝： | TO-126B-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 2SA0914 |
Power Transistors
2SA0914
(2SA914)
Silicon PNP epitaxial planar type
1
Publication date: December 2003
SJD00005CED
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
100
μ
A, I
B
= 0
I
E
=
10
μ
A, I
C
= 0
V
CB
=
100 V, I
E
=
0
V
CE
=
5 V, I
C
=
10 mA
I
C
=
30 mA, I
B
=
3 mA
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
6 V, I
E
= 0, f = 1 MHz
150
5
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
V
Collector-base cutoff current (Emitter open)
1
μ
A
Forward current transfer ratio
*
h
FE
130
330
Collector-emitter saturation voltage
V
CE(sat)
f
T
C
ob
1
V
Transition frequency
70
MHz
Collector output capacitance
(Common base, input open circuited)
5
pF
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
150
150
5
50
100
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
mA
Peak collector current
I
CP
mA
Collector power dissipation
P
C
T
j
T
stg
1.2
W
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Note) The part number in the parenthesis shows conventional part number.
Rank
R
S
h
FE
130 to 220
185 to 330
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
3.2
±
0.2
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
For audio system/pli drive
Complementary to 2SC1953
■
Features
A complementary pair with 2SC1953, is optimum for the pre-
driver stage of a 60 W to 100 W output amplifier
TO-126B package which requires no insulation plate for instal-
lation to the heat sink
■
Absolute Maximum Ratings
T
C
=
25
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SA0914(2SA914) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － その他 |
| 2SA09140R | 功能描述:TRANS PNP HF 150VCEO 50MA TO-126 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA0921 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For high breakdown voltage low-noise amplification Complementary |
| 2SA0921(2SA921) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA0921 (2SA921) - PNP Transistor |
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