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參數(shù)資料
| 型號： | 2SA0921 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For high breakdown voltage low-noise amplification Complementary |
| 中文描述： | 20 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92-B1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 2SA0921 |
Transistors
2SA0921
(2SA921)
Silicon PNP epitaxial planar type
1
Publication date: January 2003
SJC00007BED
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
■
Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
120
120
5
20
50
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
mA
Peak collector current
I
CP
mA
Collector power dissipation
P
C
T
j
250
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
CE
=
5 V, I
C
=
2 mA
I
C
=
20 mA, I
B
=
2 mA
V
CB
=
5 V, I
E
=
2 mA, f
=
200 MHz
V
CE
=
40 V, I
C
=
1 mA, G
V
= 80 dB
R
g
= 100 k
, Function = FLAT
120
120
5
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emitter-base voltage (Collector open)
V
Collector-base cutoff current (Emitter open)
I
CBO
100
1
nA
Collector-emitter cutoff current (Base open)
I
CEO
h
FE
μ
A
Forward current transfer ratio
*
180
700
Collector-emitter saturation voltage
V
CE(sat)
0.6
V
Transition frequency
f
T
NV
200
MHz
Noise voltage
150
mV
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
5.0
±
0.2
0.7
±
0.1
0.45
+0.15
2.5
+0.6
0.45
+0.15
2.5
1
2 3
+0.6
4.0
±
0.2
5
±
0
1
±
0
2
±
0
0
±
0
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) The part number in the parenthesis shows conventional part number.
Rank
R
S
T
h
FE
180 to 360
260 to 520
360 to 700
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA0921(2SA921) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA0921 (2SA921) - PNP Transistor |
| 2SA0921R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 |
| 2SA0921S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 |
| 2SA0963 | 功能描述:TRANS PNP HF 40VCEO 1.5A TO-126 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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