參數(shù)資料
型號(hào): 2SA1022
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon PNP epitaxial planer type
中文描述: 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 38K
代理商: 2SA1022
1
Transistor
2SA1022
Marking symbol
: E
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC2295
I
Features
G
High transition frequency f
T
.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
1
+
0
0.4
±
0.2
0
0
+
1
0.1 to 0.3
2
+
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
–30
–20
–5
–30
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NF
Z
rb
C
re
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
V
EB
= –5V, I
C
= 0
V
CE
= –10V, I
C
= –1mA
I
C
= –10mA, I
B
= –1mA
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 1mA, f = 5MHz
V
CB
= –10V, I
E
= 1mA, f = 2MHz
V
CE
= –10V, I
C
= –1mA
f = 10.7MHz
min
70
150
typ
– 0.1
– 0.7
300
2.8
22
1.2
max
– 0.1
–100
–10
220
Unit
μ
A
μ
A
μ
A
V
V
MHz
dB
pF
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 140
110 ~ 220
Marking Symbol
EB
EC
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