- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49889 > 2SA1297-Y 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SA1297-Y |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-4E1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 216K |
| 代理商： | 2SA1297-Y |
2SA1297
2010-03-15
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1297
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A
Complementary to 2SC3267.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Base current
IB
0.5
A
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 0.1 mA, IC = 0
6
V
hFE (1)
(Note)
VCE = 2 V, IC = 0.1 A
120
400
DC current gain
hFE (2)
VCE = 2 V, IC = 2 A
40
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.1 A
0.5
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 0.1 A
0.85
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
40
pF
Note: hFE (1) Y: 120 to 240, GR: 200 to 400
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
MINI
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1298-Y-TP | 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1298-O-TP | 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1300-Y | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1300-GR | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1300-Y | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1297-Y(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1298-O(F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1298-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1298-Y,LF | 功能描述:TRANS PNP 25V 0.8A S-MINI 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:800mA 電壓 - 集射極擊穿（最大值）:25V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:400mV @ 20mA，500mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:160 @ 100mA，1V 功率 - 最大值:200mW 頻率 - 躍遷:120MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:S-Mini 標(biāo)準(zhǔn)包裝:1 |
| 2SA1299 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92S -50V -.2A .3W ECB |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。