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參數資料
| 型號： | 2SA1300-GR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 150K |
| 代理商： | 2SA1300-GR |
2SA1300
2007-11-01
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1300
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
VCES
20
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulsed
(Note 1)
ICP
5
A
Base current
IB
0.2
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width
= 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
10
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
6
V
hFE (1)
(Note 2)
VCE = 1 V, IC = 0.5 A
140
600
DC current gain
hFE (2)
VCE = 1 V, IC = 4 A
60
120
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 50 mA
0.2
0.5
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 2 A
0.83
1.5
V
Transition frequency
fT
VCE = 1 V, IC = 0.5 A
140
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
50
pF
Note 2: hFE (1) classification Y: 140~280, GR: 200~400, BL: 300~600
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1300-GR(F) | 制造商:Toshiba 功能描述:PNP -10V -2A 200 to 400 TO92 Bulk 制造商:Toshiba America Electronic Components 功能描述:Semi,Descrete,Transistor 制造商:Toshiba 功能描述:Trans GP BJT PNP 10V 2A 3-Pin TO-92 |
| 2SA1300-Y(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1301R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1302 | 制造商:TOS 功能描述:1302 TOSHIBA NOTES |
| 2SA1302-0 | 制造商:TT Electronics / Semelab 功能描述:PNP power transistor,2SA1302 15A |
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