參數(shù)資料
型號(hào): 2SA1822
元件分類: 功率晶體管
英文描述: 1 A, 400 V, PNP, Si, POWER TRANSISTOR
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 178K
代理商: 2SA1822
2SA1822
2006-11-09
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SA1822
High-Voltage Switching Applications
High-Speed DC-DC Converter Application
Excellent switching times
: ton = 1.0 s (max), tf = 1.0 s (max) at IC = 0.3 A
High collector breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
400
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
1
A
Base current
IB
0.5
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
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