參數(shù)資料
型號: 2SA1905
元件分類: 功率晶體管
英文描述: 5 A, 50 V, PNP, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-8M1A, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 138K
代理商: 2SA1905
33
IGBT Modules
2MBI300VN-120-50
Reverse bias safe operating area (max.)
+Vge=15V, -Vge=15V, Rg=0.93Ω, Tj=150°C
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, Vge=±15V, Tj=125°C, 150°C
Switching loss vs. Collector current (typ.)
Vcc=600, Vge=±15V, Rg=0.93Ω, Tj=125°C, 150°C
Switching time vs. Collector current (typ.)
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=25°C
Vcc=600V, Vge=±15V, Rg=0.93Ω, Tj=125°C, 150°C
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, Vge=±15V, Tj=125°C, 150°C
10
100
1000
10000
0
100 200 300 400 500 600 700
Collector current: Ic [A]
S
w
itc
hi
ng
tim
e:
to
n,
tr,
to
ff,
tf
[n
se
c]
tf
tr
toff
ton
10
100
1000
10000
0
100 200 300 400 500 600 700
Collector current: Ic [A]
S
w
itc
hi
ng
tim
e:
to
n,
tr,
to
ff,
tf
[n
se
c]
tf
tr
toff
ton
Tj=125oC
Tj=150oC
10
100
1000
10000
0.1
1
10
100
Gate resistance: Rg [Ω]
S
w
itc
hi
ng
tim
e:
to
n,
tr,
to
ff,
tf
[n
se
c]
tf
tr
toff
ton
Tj=125oC
Tj=150oC
0
20
40
60
80
100
0
100 200 300 400 500 600 700
Collector current: Ic [A]
S
w
itc
hi
ng
lo
ss
:E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e]
Eon
Eoff
Err
Tj=125oC
Tj=150oC
0
50
100
150
0
1
10
100
Gate resistance: Rg [Ω]
S
w
itc
hi
ng
lo
ss
:E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e]
Eoff
Err
Eon
Tj=125oC
Tj=150oC
0
100
200
300
400
500
600
700
800
0
500
1000
1500
Collector-Emitter voltage: Vce [V]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
相關(guān)PDF資料
PDF描述
2SA1905-Y 5 A, 50 V, PNP, Si, POWER TRANSISTOR
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2SA1926 3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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