參數(shù)資料
型號(hào): 2SA1937
元件分類: 小信號(hào)晶體管
英文描述: 500 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-7B1A, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 169K
代理商: 2SA1937
2SA1937
2009-12-21
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1937
High-Voltage Switching Applications
High voltage: VCEO = 600 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
600
V
Emitter-base voltage
VEBO
7
V
DC
IC
0.5
Collector current
Pulse
ICP
1
A
Base current
IB
0.25
A
Ta = 25°C
1
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
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