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參數(shù)資料
| 型號： | 2SA1952TL/Q |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CPT3, SC-63, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 2SA1952TL/Q |
2SA1952
Transistors
Rev.A
1/2
High-speed Switching Transistor (
60V, 5A)
2SA1952
Features
1) High speed switching. (tf : Typ. 0.15
s at IC = 3A)
2) Low VCE(sat). (Typ.
0.2V at IC/IB = 3/0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
60
5
150
55~+150
Unit
V
A
10
1
10
A(Pulse)
W
W(Tc
=25°C)
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
Packaging specifications and hFE
Type
2SA1952
CPT3
Q
2500
TL
Package
hFE
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
2SA1952
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
5.1
Electrical characteristics (Ta = 25
°C)
Min.
Typ.
Max.
Unit
Conditions
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
5
120
80
130
10
0.3
270
V
A
V
MHz
pF
IC
=
50A
BVCEO
60
VIC
=
1mA
IE
=
50A
VCB
=
100V
VEB
=
5V
IC/IB
=
3A/ 0.15A
0.5
VIC/IB
=
4A/ 0.2A
VBE(sat)
1.5
VIC/IB
=
4A /0.2A
1.2
VIC/IB
=
3A/ 0.15A
hFE
1
hFE
2
VCE
=
2V , IC = 1A
40
VCE
=
2V , IC = 3A
VCE
=
10V , IE = 0.5A , f = 30MHz
VCB
=
10V , IE = 0A , f = 1MHz
ton
0.3
sIC = 3A , RL = 10
tstg
1.5
sIB1 = IB2 = 0.15A
tf
0.3
sVCC 30V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Collector-base breakdown voltage
Parameter
BVCBO
Symbol
100
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PDF描述 |
|---|---|
| 2SA1953-A | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1953-B | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1953A | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1955A | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1955CT | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1954-A(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1954-ATE85LF | 制造商:Toshiba America Electronic Components 功能描述:GP XSTOR SINGLE ARRAY |
| 2SA1954-B(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1954BTE85LF | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP USM |
| 2SA1955-A(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
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