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參數(shù)資料
| 型號： | 2SA1978-FB-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SA1978-FB-A |
3
2SA1978
TYPICAL CHARACTERISTICS
0
50
100
200
100
200
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
P
T
-
Total
Power
Dissipation
-
mV
TA - Ambient Temperature - C
150
300
400
IC - Collector Current - mA
NF
-
Noise
Figure
-
dB
VCE = 10 V
f = 1 GHZ
NOISE FIGURE VS. COLLECTOR CURRENT
1
0
2
4
6
10
100
–0.01
–1
–0.1
–10
–100
–1000
–0.1
–1.0
–10
–0.01
–1
–0.1
–10
–100
–1000
–0.1
–1.0
–10
COLLECTOR SATURATION AND BASE TO EMITTER
VOLTAGE VS. COLLECTOR CURRENT
IC - Collector Current - mA
V
BE
(ON)
-
DC
Base
Voltage
-
V
CE
(sat)
- Collector
Saturation
Voltage
-
V
BE
(sat)
- Base
Satturation
Voltage
-
V
0
6
14
1
10
100
IC - Collector Current - mA
S
21e
2
-Insertion
Power
Gain
-
dB
INSERTION GAIN vs. COLLECTOR CURRENT
f = 1 GHZ
2
4
8
10
12
0
6
14
1
10
100
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
f = 1 GHZ
2
4
8
10
12
fT
-
Gain
Bandwidth
Product
-
GH
Z
VCE = –10 V
IC = 10 IB
VCE = –1 V
VCE = –10 V
VCE = –3 V
VCE = –1 V
VCE = –10 V
VCE = –3 V
VCE = –1 V
BASE TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
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| 2SA1986-R | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1978-T1B | 制造商:NEC Electronics Corporation 功能描述: |
| 2SA1978-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
| 2SA1978-T1B-A(FB) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA198 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -15V -0.005A .03W |
| 2SA1986-O(Q) | 制造商:Toshiba 功能描述:PNP -230V -15A 80 to 160 TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:Transistor 制造商:Toshiba 功能描述:Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PN |
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