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參數(shù)資料
| 型號(hào)： | 2SA1978-FB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | 2SA1978-FB |
2SA673A(K)
Rev.3.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–50
—
V
IC = –10 A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
–50
—
V
IC = –1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
–4
—
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
—
–0.5
A
VCE = –20 V, IE = 0
Emitter cutoff current
IEBO
—
–0.5
A
VEB = –3 V, IC = 0
Base to emitter voltage
VBE
—
–0.64
—
V
VCE = –3 V, IC = –10 mA
Collector to emitter saturation voltage
VCE(sat)
—
–0.2
–0.6
V
IC = –150 mA, IB = –15 mA*
2
Base to emitter saturation voltage
VBE(sat)
—
–0.87
—
V
IC = –150 mA, IB = –15 mA*
2
DC current transfer ratio
hFE*
1
60
—
320
VCE = –3 V, IC = –10 mA
hFE
10
—
VCE = –3 V, IC = –500 mA*
2
Gain bandwidth product
fT
—
120
—
MHz
VCE = –3 V, IC = –10 mA
Turn on time
ton
—
0.3
—
s
VCC = –10.3 V
Turn off time
toff
—
0.6
—
s
IC = 10 IB1 = –10 IB2 = –10 mA
Storage time
tstg
—
0.4
—
s
VCC = –5 V,
IC = IB1 = IB2 = –20 mA
Notes: 1. The 2SA673A(K) is grouped by hFE as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1978-FB(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1978-T1B | 制造商:NEC Electronics Corporation 功能描述: |
| 2SA1978-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
| 2SA1978-T1B-A(FB) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA198 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -15V -0.005A .03W |
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