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參數(shù)資料
| 型號： | 2SA1978(NE97833) |
| 廠商： | NEC Corp. |
| 英文描述： | Discrete |
| 中文描述： | 離散 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SA1978(NE97833) |
Silicon Transistor
2SA1978
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
1996
Document No. P11028EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PRELIMINARY DATA SHEET
FEATURES
High f
T
PACKAGE DIMENSIONS
(in milimeters)
2.8+0.2
0
+
f
T
= 5.5 GHz TYP.
| S
21e
|
2
= 10.0 dB TYP. @f = 1.0 GHz, V
CE
=
10 V, I
C
=
15 mA
High speed switching characteristics
Equivalent NPN transistor is the 2SC2351.
Alternative of the 2SA1424.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CB0
20
V
Collector to Emitter Voltage
V
CE0
12
V
Emitter to Base Voltage
V
EB0
3.0
V
Collector Current
I
C
50
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
i
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CB0
V
CB
=
10 V
0.1
μ
A
Emitter Cutoff Current
I
EB0
V
EB
=
2 V
0.1
μ
A
DC Current Gain
h
FE
V
CE
=
10 V, I
C
=
15 mA
20
40
100
Gain Bandwidth Product
f
T
V
CE
=
10 V, I
C
=
15 mA
4.0
5.5
GHz
Collector Capacitance
C
re
*
V
CB
=
10 V, I
E
= 0, f = 1 MHz
0.5
1
pF
Insertion Power Gain
| S
21e
|
2
V
CE
=
10 V, I
C
=
15 mA, f = 1.0 GHz
8.0
10.0
dB
Noise Figure
NF
V
CE
=
10 V, I
C
=
3.0 mA, f = 1 GHz
2.0
3
dB
*
Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Rank
FB
Marking
T93
h
FE
20 to 100
_
1.5
0.65
+0.1
2
1
3
2
_
0
0
–
0
+
–
Marking
0
+
–
0
1
0
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking: T93
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