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參數(shù)資料
| 型號(hào)： | 2SA1988-A |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 7 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MP-88, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 2SA1988-A |
1996
DATA SHEET
Silicon Power Transistor
2SA1988
DESCRIPTION
The 2SA1988 is PNP Silicon Power Transistor that
designed for audio frequency power amplifier.
FEATURES
High Voltage VCEO = 200 V
DC Current Gain hFE = 70 to 200
TO-3P Package
ORDERING INFORMATION
Type Number
Package
2SA1988
MP-88
PNP SILICON TRANSISTOR
POWER AMPLIFIER
INDUSTRIAL USE
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
200
V
Collector to Emitter Voltage
VCEO
200
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC (DC)
7.0
A
Collector Current (pulse)
IC (pulse) *1
-10
A
Total Power Dissipantion
P2 *2
100
W
JunctionTemperature
TJ
150
°C
Storage Tempreature
Tstg
55 to +150
°C
*1 PW
≤ 300
s, Duty Cycle ≤ 10 %
*2 TC = 25
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
50
AVCB = 200 V, IE = 0
Emitter Cutoff Current
IEBO
50
AVEB = 3.0 V, IC = 0
DC Current Gain
hFE1
70
200
VCE =
5.0 V, IC = 1.0 A
DC Current Gain
hFE2
20
VCE =
5.0 V, IC = 3.5 A
Collector Saturation Voltage
VCE (sat)
0.6
2.0
V
IC =
5.0 V, IE = 0.5 V
Base Saturation Voltage
VBE (sat)
1.3
2.0
V
IC =
5.0 V, IE = 0.5 V
Gain Band width Product
fT
40
MHz
VCE =
5.0 V, IC = 1.0 mA
Output Capacitance
Cob
270
pF
VCB =
10 V, IC = 0, f = 1.0 MHz
Pulse Test PW ≤ 350
s, Duty Cycle ≤ 2 %
PACKAGE DIMENSIONS
The information in this document is subject to change without notice.
MP-88
1.Base
2.Collector
3.Emitter
4.Fin (Collector)
1
2
3
15.7 MAX.
3.2±0.2
4.5±0.2
5.0
1.0
3.4MAX.
20.5MAX.
19
MIN.
2.2±0.2
5.45
1.0±0.2
4
4.7 MAX.
1.5
2.8±0.1
0.6±0.1
φ
Document No. D11176EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
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