參數(shù)資料
型號: 2SA2010
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type
中文描述: 2500 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINI3-G1, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 50K
代理商: 2SA2010
Transistors
2SA2010
Silicon PNP epitaxial planer type
1
For DC-DC converter
For various driver circuits
I
Features
Low collector to emitter saturation voltage
V
CE(sat)
, large current
capacitance
High-speed switching
Mini type 3-pin package, allowing downsizing and thinning of the
equipment.
Complementary pair with 2SC5592
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CBO
V
CB
=
10 V, I
E
=
0
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CE
=
2 V, I
C
=
100 mA
V
CE
=
2 V, I
C
=
2.5 A
I
C
=
1 A, I
B
=
10 mA
I
C
=
2.5 A, I
B
=
50 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CB
=
10 V, I
E
=
50 mA
f
=
200 MHz
0.1
μ
A
Collector to base voltage
15
15
5
V
Collector to emitter voltage
V
CEO
V
EBO
h
FE1
V
Emitter to base voltage
Forward current transfer ratio
*1
V
200
560
h
FE2
V
CE(sat)
100
Collector to emitter saturation voltage
*1
140
270
mV
320
mV
Collector output capacitance
C
ob
f
T
40
pF
Transition frequency
180
MHz
Turn-on time
*2
Storage time
*2
Turn-off time
*2
t
on
t
stg
35
ns
110
ns
t
off
10
ns
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol: AS
0.40
+0.10
(
1
+
2
+
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
0.16
+0.10
0
±
5
°
10
°
0
1
+
1
+
Note)*: Measure on the ceramic substrate at 15
×
15
×
0.6 mm
3
.
Note)*1: Rank classification
*2: Reference to the measurement circuit.
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini Type Package (3-pin)
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
15
15
5
10
2.5
V
Collector to emitter voltage
V
Emitter to base voltage
V
Peak collector current
I
CP
I
C
P
C
A
Collector current
A
Collector power dissipation
*
600
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
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