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參數(shù)資料
| 型號(hào)： | 2SA2059 |
| 廠商： | Toshiba Corporation |
| 英文描述： | SILICON PNP EPITAXIAL TYPE |
| 中文描述： | 硅外延式進(jìn)步黨 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 182K |
| 代理商： | 2SA2059 |
2SA2059
2001-10-29
4
Pulse width t
w
(s)
r
th
– t
w
T
r
t
Collector-emitter voltage V
CE
(V)
Safe Operating Area
C
C
1
0.001
0.01
0.1
1
10
100
1000
10
1000
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
=
25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm
2
)
100
0.01
0.1
1
10
100
0.1
1
10
IC max (pulsed)
DC operation
*
(Ta
=
25°C)
V
IC max (continuous)
10 ms
1 ms
10
μ
s
100
μ
s
100 ms
*
10 s
*
: Single nonrepetitive pulse
Ta
=
25°C
Note that the curves for 100 ms
*
,
10 s
*
and DC operation
*
will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
). These characteristic
curves must be derated linearly
with increase in temperature.
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