參數(shù)資料
型號(hào): 2SA2067
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type
中文描述: 3 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, MT-4-A1, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 74K
代理商: 2SA2067
Power Transistors
2SA2067
Silicon PNP epitaxial planar type
1
Publication date: January 2003
SJD00286BED
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
Features
High speed switching (t
stg
: storage time/t
f
: fall time is short)
Low collector-emitter saturation voltage V
CE(sat)
Superior forward current transfer ratio h
FE
linearity
Allowing automatic insertion eith radial taping
Absolute Maximum Ratings
T
C
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
60
6
3
6
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
15
W
T
a
=
25
°
C
2.0
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
10 mA, I
B
=
0
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
375 mA
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
=
0.1 A
V
CC
=
50 V
60
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
100
100
1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1 *
h
FE2
mA
Forward current transfer ratio
120
320
40
Collector-emitter saturation voltage
V
CE(sat)
0.8
V
Transition frequency
f
T
t
on
90
MHz
Turn-on time
0.3
μ
s
μ
s
μ
s
Storage time
t
stg
0.7
Fall time
t
f
0.15
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
10.0
±
0.2
0.65
±
0.1
0.35
±
0.1
2.5
±
0.2
1
2
3
0.65
±
0.1
1.2
±
0.1
1.48
±
0.2
2.25
±
0.2
C 1.0
0.55
±
0.1
0.55
±
0.1
2.5
±
0.2
1.05
±
0.1
1
±
0
4
±
0
1
±
0
S
5.0
±
0.1
2
±
0
9
1.0
±
0.2
1 : Base
2 : Collector
3 : Emitter
MT-4-A1 Package
Internal Connection
B
C
E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
Q
P
h
FE1
120 to 250
160 to 320
相關(guān)PDF資料
PDF描述
2SA2069 High-Speed Switching Applications DC-DC Converter Applications
2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2074 Silicon PNP epitaxial planar type(Industrial equipments such as DC-DC converters)
2SA2075 Silicon PNP epitaxial planar type
2SA2077 Silicon PNP epitaxial planar type(Complementary to 2SC5845)
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