參數(shù)資料
型號： 2SA2070
廠商： Toshiba Corporation
英文描述： TOSHIBA Transistor Silicon PNP Epitaxial Type
中文描述： 東芝晶體硅外延式進步黨
文件頁數(shù)： 1/5頁
文件大小： 134K
代理商： 2SA2070
2SA2070
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2070
High-Speed Switching Applications
DC-DC Converter Applications
High DC current gain: h
FE
= 200 to 500 (I
C
= -0.1 A)
Low collector-emitter saturation voltage: V
CE (sat)
=- 0.20 V (max)
High-speed switching: t
f
= 70 ns (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
7
V
DC
I
C
1.0
Collector current
Pulse
I
CP
2.0
A
Base current
I
B
0.1
A
DC
1.0
Collector power
dissipation
t = 10 s
P
C
(Note)
2.0
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
50 V, I
E
= 0
―
―
100
nA
Emitter cut-off current
I
EBO
V
EB
=
7 V, I
C
= 0
―
―
100
nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
=
10 mA, I
B
= 0
50
―
―
V
h
FE
(1)
V
CE
=
2 V, I
C
=
0.1 A
200
―
500
DC current gain
h
FE
(2)
V
CE
=
2 V, I
C
=
0.3 A
125
―
―
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
0.3 A, I
B
=
0.01 mA
―
―
0.20
V
Base-emitter saturation voltage
V
BE (sat)
I
C
=
0.3 A, I
B
=
0.01 mA
―
―
1.10
V
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
= 0, f = 1 MHz
―
8
―
pF
Rise time
t
r
―
60
―
Storage time
t
stg
―
280
―
Switching time
Fall time
t
f
See Figure 1.
V
CC
≈
30 V, R
L
= 100
I
B1
=
I
B2
=
10 mA
―
70
―
ns
Unit: mm
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA2070(TE12L,F) 制造商:Toshiba 功能描述:PNP 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP 50V 1A SC-62 制造商:Toshiba America Electronic Components 功能描述:Transistor PNP 50V 1A hfe200-500 70ns PW
2SA2070_10 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications
2SA2071 制造商:ROHM Semiconductor 功能描述:
2SA2071_11 制造商:ROHM 制造商全稱:Rohm 功能描述:Power transistor
2SA2071T100Q 功能描述:兩極晶體管 - BJT TRANSISTOR 60V3A PNP CPT3;HI VLT DISCHRG RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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