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參數(shù)資料
| 型號(hào)： | 2SA836 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(小信號(hào)晶體管) |
| 中文描述： | 硅外延進(jìn)步黨（小信號(hào)晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 32K |
| 代理商： | 2SA836 |
2SA836
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
–55
V
Collector to emitter voltage
–55
V
Emitter to base voltage
–5
V
Collector current
–100
mA
Emitter current
100
mA
Collector power dissipation
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–55
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–55
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
—
—
–100
nA
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V, I
C
= –2 mA
I
C
= –10 mA, I
B
= –1 mA
Emitter cutoff current
—
—
–50
nA
DC current transfer ratio
160
—
500
Collector to emitter saturation
voltage
—
–0.1
–0.5
V
Base to emitter voltage
V
BE
f
T
Cob
—
–0.66
–0.75
V
V
CE
= –12 V, I
C
= –2 mA
V
CE
= –12 V, I
E
= –2 mA
V
CB
= –10 V, I
E
= 0, f = 1MHz
V
CE
= –6 V,
I
C
= –0.1mA,
R
g
= 10 k
Gain bandwidth product
—
200
—
MHz
Collector output capacitance
—
2.0
—
pF
Noise figuer
NF
—
1
5
dB
f = 10 Hz
—
0.5
1
dB
f = 1 kHz
Note:
C
1. The 2SA836 is grouped by h
FE
as follows.
D
160 to 320
250 to 500
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA836C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SPAKVAR |
| 2SA836CTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA836D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SPAKVAR |
| 2SA836DTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA837 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
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