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參數(shù)資料
| 型號： | 2SA844CTZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43A, TO-92(1), 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 156K |
| 代理商： | 2SA844CTZ |
2SA844
Rev.2.00 Aug 10, 2005 page 2 of 4
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–55
—
V
IC = –10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
–55
—
V
IC = –1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
–5
—
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
—
–100
nA
VCB = –18 V, IE = 0
Emitter cutoff current
IEBO
—
–50
nA
VEB = –2 V, IC = 0
DC current transfer ratio
hFE*
1
160
—
500
VCE = –12 V, IC = –2 mA
Collector to emitter saturation voltage
VCE(sat)
—
–0.1
–0.5
V
IC = –10 mA, IB = –1 mA
Base to emitter voltage
VBE
—
–0.66
–0.75
V
VCE = –12 V, IC = –2 mA
Gain bandwidth product
fT
—
200
—
MHz
VCE = –12 V, IE = –2 mA
Collector output capacitance
Cob
—
2.0
—
pF
VCB = –10 V, IE = 0, f = 1 MHz
Note:
1. The 2SA844 is grouped by hFE as follows.
C
D
160 to 320
250 to 500
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA844D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SPAKVAR |
| 2SA844DTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA844E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SPAKVAR |
| 2SA847 | 制造商:Distributed By MCM 功能描述:SUB ONLY MITSUBISHI TRANS. TO- -90V -.05A .2W BCE |
| 2SA854 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium Power Transistor (-32V, -0.5A) |
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