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參數(shù)資料
| 型號： | 2SA844D |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 38K |
| 代理商： | 2SA844D |
2SA844
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–55
V
Collector to emitter voltage
V
CEO
–55
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Emitter current
I
E
100
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–55
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–55
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–100
nA
V
CB = –18 V, IE = 0
Emitter cutoff current
I
EBO
—
–50
nA
V
EB = –2 V, IC = 0
DC current transfer ratio
h
FE*
1
160
—
800
V
CE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.1
–0.5
V
I
C = –10 mA, IB = –1 mA
Base to emitter voltage
V
BE
—
–0.66
–0.75
V
CE = –12 V, IC = –2 mA
Gain bandwidth product
f
T
—
200
—
MHz
V
CE = –12 V, IE = –2 mA
Collector output capacitance
Cob
—
2.0
—
pF
V
CB = –10 V, IE = 0, f = 1 MHz
Note:
1. The 2SA844 is grouped by h
FE as follows.
CD
E
160 to 320
250 to 500
400 to 800
See characteristic curves of 2SA836.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA844DTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA844E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SPAKVAR |
| 2SA847 | 制造商:Distributed By MCM 功能描述:SUB ONLY MITSUBISHI TRANS. TO- -90V -.05A .2W BCE |
| 2SA854 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium Power Transistor (-32V, -0.5A) |
| 2SA854S | 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium Power Transistor (-32V, -0.5A) |
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