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參數(shù)資料
| 型號： | 2SA854ST146R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SPT, SC-72, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 72K |
| 代理商： | 2SA854ST146R |
2SA854S
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Min.
40
32
5
200
1
390
0.6
V
IC
=
100A
IC
=
1mA
IE
=
100A
VCB
=
20V
VEB
=
4V
VCE
=
3V, IC=100mA
IC/IB
=
500mA/50mA
VCE
=
5V, IE=20mA, f=100MHz
VCB
=
10V, IE=0A, f=1MHz
V
A
120
V
MHz
pF
8
Typ.
Max.
Unit
Conditions
DC current transfer ratio
Transition frequency
Output capacitance
Packaging specifications and hFE
Package
Code
Basic ordering unit (pieces)
Taping
T146
3000
hFE
QR
2SA854S
Type
hFE values are classified as follows :
Item
Q
R
hFE
120~270
180~390
Electrical characteristic curves
Fig.1 Grounded emitter propagation
-0.2
0
-500
-200
-100
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
VCE
=
3V
COLLECTOR
CURRENT
:
I
C
(
mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Ta
=100
°C
25
°C
55°C
Fig.2 Grounded emitter output
characteristics ( )
-1
-40
-80
-3
0
-20
-60
-100
0-2
-4
-5
COLLECTOR
CURRENT
:
I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta
=25
°C
IB
=0A
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
1mA
Ι
-200
-400
-10
-5
0
-100
-300
-500
0
COLLECTOR
CURRENT
:
I
C
(
mA)
Ta
=25
°C
IB
=0A
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
4.0mA
4.5mA
5.0mA
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.3 Grounded emitter output
characteristics ( )
ΙΙ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA854STPQ | 功能描述:兩極晶體管 - BJT DVR PNP 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA854STPR | 功能描述:兩極晶體管 - BJT DVR PNP 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA857 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-150V -.05A .5W ECB |
| 2SA858 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-150V -.05A .5W ECB |
| 2SA866 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-30V -.1A .3W EBC |
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