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參數(shù)資料
| 型號(hào)： | 2SB0792 |
| 英文描述： | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 中文描述： | 小信號(hào)裝置-小信號(hào)晶體管-一般使用低頻Amplifires |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | 2SB0792 |
1
Transistor
2SB0709A (2SB709A)
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD0601A (2SD601A)
I Features
G High foward current transfer ratio hFE.
G Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TO–236
2:Emitter
EIAJ:SC–59
3:Collector
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±0.15
0.65
±0.15
3
1
2
0.95
1.9
±
0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4
±0.2
0
to
0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–45
–7
–200
–100
200
150
–55 ~ +150
Unit
V
mA
mW
C
I Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –10V, IB = 0
IC = –10
A, I
E = 0
IC = –2mA, IB = 0
IE = –10A, IC = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–45
–7
160
typ
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
A
V
MHz
pF
*1h
FE Rank classification
Rank
Q
R
S
hFE
160 ~ 260
210 ~ 340
290 ~ 460
Marking Symbol
BQ
BR
BS
Note.) The Part number in the Parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB792 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0792A | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB792A | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB709A | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0745 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0792(2SB792) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0792/2SB0792A(2SB792/2SB792A) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:2SB0792. 2SB0792A (2SB792. 2SB792A) - PNP Transistor |
| 2SB07920SL | 功能描述:TRANS PNP 150VCEO 50MA SC-59 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱(chēng):MMBT489LT1GOSDKR |
| 2SB0792A | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:For High Breakdown Voltage Low-noise Amplification |
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