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參數資料
| 型號： | 2SB0930 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Power Amplification |
| 中文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SB0930 |
Power Transistors
2SB0930
(2SB930)
, 2SB0930A
(2SB930A)
Silicon PNP epitaxial planar type
1
Publication date: April 2003
SJD00012BED
For power amplification
Complementary to 2SD1253, 2SD1253A
■
Features
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector-emitter saturation voltage V
CE(sat)
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB0930
V
CBO
60
80
60
80
5
4
8
V
2SB0930A
Collector-emitter voltage
(Base open)
2SB0930
V
CEO
V
2SB0930A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
A
Peak collector current
A
Collector power dissipation
P
C
40
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB0930
V
CEO
I
C
=
30 mA, I
B
=
0
60
80
V
2SB0930A
Collector-emitter cutoff
current (E-B short)
2SB0930
I
CES
V
CE
=
60 V, V
BE
= 0
V
CE
=
80 V, V
BE
= 0
V
CE
=
30 V, I
B
= 0
V
CE
=
60 V, I
B
= 0
V
EB
=
5 V, I
C
= 0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
4 A, I
B
=
0.4 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
I
C
=
4 A,
I
B1
=
0.4 A, I
B2
=
0.
4 A
V
CC
=
50 V
400
400
700
700
1
μ
A
2SB0930A
Collector-emitter cutoff
current (Base open)
2SB0930
I
CEO
μ
A
2SB0930A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1 *
mA
Forward current transfer ratio
70
250
h
FE2
15
Base-emitter voltage
V
BE
V
CE(sat)
2.0
1.5
V
Collector-emitter saturation voltage
V
Transition frequency
f
T
20
MHz
Turn-on time
t
on
t
stg
0.2
μ
s
μ
s
Storage time
0.5
Fall time
t
f
0.2
μ
s
8.5
±
0.2
3.4
±
0.3
1.0
±
0.1
0 to 0.4
6.0
±
0.2
0.8
±
0.1
R = 0.5
R = 0.5
1.0
±
0.1
0.4
±
0.1
(8.5)
(6.5)
1.3
(
(
2.54
±
0.3
1.4
±
0.1
5.08
±
0.5
1
2
3
1
±
0
2
±
0
1
±
0
1
+
–
3
+
–
4
±
0
4
±
1
±
0
Rank
Q
P
h
FE1
70 to 150
120 to 250
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Note) The part number in the parenthesis shows conventional part number.
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PDF描述 |
|---|---|
| 2SB0930A | For Power Amplification |
| 2SB0931 | For Power Switching |
| 2SB0932 | For Power Switching |
| 2SB0933 | For Power Switching |
| 2SB0934 | For Power Switching |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB0930(2SB930) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
| 2SB0930/2SB0930A(2SB930/2SB930A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SB0930. 2SB0930A (2SB930. 2SB930A) - PNP Transistor |
| 2SB0930A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Power Amplification |
| 2SB0930A(2SB930A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Device - Power Transistors - General-Purpose power amplification |
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