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參數(shù)資料
| 型號(hào)： | 2SB0931 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Power Switching |
| 中文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | 2SB0931 |
Power Transistors
2SB0931
(2SB931)
Silicon PNP epitaxial planar type
1
Publication date: April 2003
SJD00013BED
For Power switching
Complementary to 2SD1254
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■
Absolute Maximum Ratings
T
C
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
130
80
7
3
6
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emitter-base voltage (Collector open)
V
Collector current
I
C
A
Peak collector current
I
CP
P
C
A
Collector power dissipation
30
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
10 mA, I
B
=
0
V
CB
=
100 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
0.5 A
I
C
=
2 A, I
B
=
0.1 A
I
C
=
2 A, I
B
=
0.1 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
I
C
=
0.5 A,
I
B1
=
50 mA, I
B2
=
50 mA
V
CC
=
50 V
80
V
Collector-base cutoff current (Emitter open)
I
CBO
I
EBO
10
50
μ
A
μ
A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE1
h
FE2 *
V
BE(sat)
45
90
260
Base-emitter voltage
1.5
0.5
V
Collector-emitter saturation voltage
V
CE(sat)
V
Transition frequency
f
T
t
on
30
MHz
Turn-on time
0.3
μ
s
μ
s
Storage time
t
stg
1.1
Fall time
t
f
0.3
μ
s
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Rank
Q
P
h
FE2
90 to 180
130 to 260
Note) The part number in the parenthesis shows conventional part number.
8.5
±
0.2
3.4
±
0.3
1.0
±
0.1
0 to 0.4
6.0
±
0.2
0.8
±
0.1
R = 0.5
R = 0.5
1.0
±
0.1
0.4
±
0.1
(8.5)
(6.0)
(6.5)
1.3
(
(
2.54
±
0.3
1.4
±
0.1
5.08
±
0.5
1
2
3
1
±
0
2
±
0
1
±
0
1
+
–
3
+
–
4
±
0
4
±
1
±
0
Note) Self-supported type package is also prepared.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
1: Base
2: Collector
3: Emitter
N-G1 Package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0932 | For Power Switching |
| 2SB0933 | For Power Switching |
| 2SB0934 | For Power Switching |
| 2SB0936 | For Low-Voltage Switching |
| 2SB0936A | For Low-Voltage Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0931(2SB931) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Device - Power Transistors - General-Purpose power amplification |
| 2SB0931P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SB0931Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SB0932 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Power Switching |
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