參數(shù)資料
型號(hào)： 2SB0936A
廠商： PANASONIC CORP
元件分類： 功率晶體管
英文描述： For Low-Voltage Switching
中文描述： 10 A, 40 V, PNP, Si, POWER TRANSISTOR
封裝： ROHS COMPLIANT, N-G1, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 85K
代理商： 2SB0936A
Power Transistors
2SB0936
(2SB936)
, 2SB0936A
(2SB936A)
Silicon PNP epitaxial planar type
1
Publication date: April 2003
SJD00017BED
For low-voltage switching
■
Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB0936
V
CBO
40
50
20
40
5
10
20
V
2SB0936A
Collector-emitter voltage
(Base open)
2SB0936
V
CEO
V
2SB0936A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
A
Peak collector current
A
Collector power dissipation
P
C
40
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB0936
V
CEO
I
C
=
10 mA, I
B
=
0
20
40
V
2SB0936A
Collector-base cutoff
current (Emitter open)
2SB0936
I
CBO
V
CB
=
40 V, I
E
= 0
V
CB
=
50 V, I
E
= 0
V
EB
=
5 V, I
C
= 0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
3 A
I
C
=
10 A, I
B
=
0.33 A
I
C
=
10 A, I
B
=
0.33 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
V
CB
=
10 V, I
E
=
0
, f
=
1 MHz
50
50
50
μ
A
2SB0936A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1 *
μ
A
Forward current transfer ratio
45
h
FE2
V
BE(sat)
90
260
Base-emitter voltage
1.5
0.6
V
Collector-emitter saturation voltage
V
CE(sat)
V
Transition frequency
f
T
C
ob
100
MHz
Collector output capacitance
400
pF
(Common base, input open circuited)
Turn-on time
t
on
t
stg
I
C
=
3 A,
I
B1
=
0.1 A, I
B2
=
0.
1 A
V
CC
=
20 V
0.1
μ
s
μ
s
Storage time
0.5
Fall time
t
f
0.1
μ
s
8.5
±
0.2
3.4
±
0.3
1.0
±
0.1
0 to 0.4
6.0
±
0.2
0.8
±
0.1
R = 0.5
R = 0.5
1.0
±
0.1
0.4
±
0.1
(8.5)
(6.5)
1.3
(
(
2.54
±
0.3
1.4
±
0.1
5.08
±
0.5
1
2
3
1
±
0
2
±
0
1
±
0
1
+
–
3
+
–
4
±
0
4
±
1
±
0
Rank
Q
P
h
FE1
90 to 180
130 to 260
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Note) The part number in the parenthesis shows conventional part number.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB0936A(2SB936A) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅
2SB0936AP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-262VAR
2SB0936AQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-262VAR
2SB0936P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-262VAR
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