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參數(shù)資料
| 型號： | 2SB0937 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Power Amplification And Switching |
| 中文描述： | 2 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SB0937 |
Power Transistors
2SB0937
(2SB937)
, 2SB0937A
(2SB937A)
Silicon PNP epitaxial planar type Darlington
1
Publication date: March 2003
SJD00018BED
For power amplification and switching
Complementary to 2SD1260, 2SD1260A
■
Features
High forward current transfer ratio h
FE
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB0937
V
CBO
60
80
60
80
5
2
4
V
2SB0937A
Collector-emitter voltage
(Base open)
2SB0937
V
CEO
V
2SB0937A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
A
Peak collector current
A
Collector power dissipation
P
C
35
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB0937
V
CEO
I
C
=
30 mA, I
B
=
0
60
80
V
2SB0937A
Base-emitter voltage
V
BE
V
CE
=
4 V,I
C
=
2 A
V
CB
=
60 V,I
E
= 0
V
CB
=
80 V,I
E
= 0
V
CE
=
30 V,I
B
= 0
V
CE
=
40 V,I
B
= 0
V
EB
=
5 V,I
C
= 0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
2 A
I
C
=
2 A, I
B
=
8 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
2 A,
I
B1
=
8 mA, I
B2
=
8
mA
V
CC
=
50 V
2.8
1
1
2
2
2
V
Collector-base cutoff
current (Emitter open)
2SB0937
I
CBO
mA
2SB0937A
Collector-emitter cutoff
current (Base open)
2SB0937
I
CEO
mA
2SB0937A
Emitter-base cutoff current (Collector open)
I
EBO
mA
Forward current transfer ratio
h
FE1
h
FE2 *
V
CE(sat)
1
000
2
000
10
000
Collector-emitter saturation voltage
2.5
V
Transition frequency
f
T
20
MHz
Turn-on time
t
on
t
stg
0.4
μ
s
μ
s
Strage time
1.5
Fall time
t
f
0.5
μ
s
8.5
±
0.2
3.4
±
0.3
1.0
±
0.1
0 to 0.4
6.0
±
0.2
0.8
±
0.1
R = 0.5
R = 0.5
1.0
±
0.1
0.4
±
0.1
(8.5)
(6.0)
(6.5)
1.3
(
(
2.54
±
0.3
1.4
±
0.1
5.08
±
0.5
1
2
3
1
±
0
2
±
0
1
±
0
1
+
–
3
+
–
4
±
0
4
±
1
±
0
Rank
Q
P
h
FE1
2
000 to 5
000 4
000 to 10
000
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
B
C
E
Note) The part number in the parenthesis shows conventional part number.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0937/2SB0937A(2SB937/2SB937A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SB0937. 2SB0937A (2SB937. 2SB937A) - PNP Transistor Darlington |
| 2SB0937A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Power Amplification And Switching |
| 2SB0937AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-262VAR |
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