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參數(shù)資料
| 型號： | 2SB0938A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Power Amplification And Switching |
| 中文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SB0938A |
Power Transistors
2SB0938
(2SB938)
, 2SB0938A
(2SB938A)
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1261, 2SD1261A
1
Publication date: March 2003
SJD00019BED
■
Features
High forward current transfer ratio h
FE
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB0938
V
CBO
60
80
60
80
5
4
8
V
2SB0938A
Collector-emitter voltage
(Base open)
2SB0938
V
CEO
V
2SB0938A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
A
Peak collector current
I
CP
P
C
A
Collector power dissipation
40
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB0938
V
CEO
I
C
=
30 mA, I
B
=
0
60
80
V
2SB0938A
Base-emitter voltage
V
BE
V
CE
=
3 V,I
C
=
3 A
V
CB
=
60 V,I
E
= 0
V
CB
=
80 V,I
E
= 0
V
CE
=
30 V,I
B
= 0
V
CE
=
40 V,I
B
= 0
V
EB
=
5 V,I
C
= 0
V
CE
=
3 V, I
C
=
0.5 A
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
12 mA
I
C
=
5 A, I
B
=
20 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
3 A,
I
B1
=
12 mA, I
B2
=
12
mA
V
CC
=
50 V
2.5
200
200
500
500
2
V
Collector-base cutoff
current (Emitter open)
2SB0938
I
CBO
μ
A
2SB0938A
Collector-emitter cutoff
current (Base open)
2SB0938
I
CEO
μ
A
2SB09378
Emitter-base cutoff current (Collector open)
I
EBO
mA
Forward current transfer ratio
h
FE1
h
FE2 *
V
CE(sat)
1
000
2
000
10
000
Collector-emitter saturation voltage
2
4
V
Transition frequency
f
T
t
on
15
MHz
Turn-on time
0.3
μ
s
μ
s
Strage time
t
stg
2
Fall time
t
f
0.5
μ
s
8.5
±
0.2
3.4
±
0.3
1.0
±
0.1
0 to 0.4
6.0
±
0.2
0.8
±
0.1
R = 0.5
R = 0.5
1.0
±
0.1
0.4
±
0.1
(8.5)
(6.0)
(6.5)
1.3
(
(
2.54
±
0.3
1.4
±
0.1
5.08
±
0.5
1
2
3
1
±
0
2
±
0
1
±
0
1
+
–
3
+
–
4
±
0
4
±
1
±
0
Rank
Q
P
h
FE1
2
000 to 5
000 4
000 to 10
000
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
B
C
E
Note) The part number in the parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB0939 | For Midium-Speed Power Switching |
| 2SB0939A | For Midium-Speed Power Switching |
| 2SB0940A | For Power Amplification |
| 2SB0940 | For Power Amplification |
| 2SB0942 | For Low-Frequency Power Amplification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0938A(2SB938A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － 汎用電力増幅 |
| 2SB0938AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-262VAR |
| 2SB0938AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-262VAR |
| 2SB0938P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 4A I(C) | TO-262VAR |
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