參數(shù)資料
型號: 2SB0948A
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: For Low-Voltage Switching
中文描述: 10 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3
文件頁數(shù): 1/4頁
文件大?。?/td> 85K
代理商: 2SB0948A
Power Transistors
2SB0948
(2SB948)
, 2SB0948A
(2SB948A)
Silicon PNP epitaxial planar type
1
Publication date: April 2003
SJD00027BED
For low-voltage switching
Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings
T
C
=
25
°
C
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB0948
V
CBO
40
50
20
40
5
10
20
V
2SB0948A
Collector-emitter voltage
(Base open)
2SB0948
V
CEO
V
2SB0948A
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
40
W
T
a
=
25
°
C
2
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB0948
V
CEO
I
C
=
10 mA, I
B
=
0
20
40
V
2SB0948A
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
40 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
3 A
I
C
=
10 A, I
B
=
0.33 A
I
C
=
10 A, I
B
=
0.33 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
50
50
μ
A
μ
A
Emitter-base cutoff current (Collector open)
I
EBO
Forward current transfer ratio
h
FE1
h
FE2 *
45
60
260
Collector-emitter saturation voltage
V
CE(sat)
0.6
1.5
V
Base-emitter saturation voltage
V
BE(sat)
f
T
C
ob
V
Transition frequency
100
MHz
Collector output capacitance
(Common base, input open circuited)
400
pF
Turn-on time
t
on
I
C
=
3 A, I
B1
=
0.1 A, I
B2
=
0.1 A
V
CC
=
20 V
0.1
μ
s
μ
s
μ
s
Storage time
t
stg
t
f
0.5
Fall time
0.1
Note) The part numbers in the parenthesis show conventional part number.
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
(
0.5
+0.2
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.3
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
R
Q
P
h
FE2
60 to 120
90 to 180
130 to 260
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