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參數(shù)資料
| 型號： | 2SB0950A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Power Amplification And Switching |
| 中文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SB0950A |
Power Transistors
2SB0950
(2SB950)
, 2SB0950A
(2SB950A)
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
1
Publication date: April 2003
c
■
Features
High forward current transfer ratio h
FE
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB0950
V
CBO
60
80
60
80
5
4
8
V
2SB0950A
Collector-emitter voltage
(Base open)
2SB0950
V
CEO
V
2SB0950A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
A
Peak collector current
A
Collector power
P
C
40
W
dissipation
T
a
=
25
°
C
2
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB0950
V
CEO
I
C
=
30 mA, I
B
=
0
60
80
V
2SB0950A
Base-emitter voltage
V
BE
V
CE
=
3 V, I
C
=
3 A
V
CB
=
60 V, I
E
=
0
V
CB
=
80 V, I
E
=
0
V
CE
=
30 V, I
B
=
0
V
CE
=
40 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
3 V, I
C
=
0.5 A
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
12 mA
I
C
=
5 A, I
B
=
20 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
3 A, I
B1
=
12 mA, I
B2
=
12 mA
V
CC
=
50 V
2.5
200
200
500
500
2
V
Collector-base cutoff
current (Emitter open)
2SB0950
I
CBO
μ
A
2SB0950A
Collector-emitter cutoff
2SB0950
I
CEO
μ
A
current (Base open)
2SB0950A
Emitter-base cutoff current (Collector open)
I
EBO
mA
Forward current transfer ratio
h
FE1
h
FE2 *
V
CE(sat)1
1
000
1
000
10
000
Collector-emitter saturation voltage
2
4
V
V
CE(sat)2
V
Transition frequency
f
T
t
on
20
MHz
Turn-on time
0.3
μ
s
μ
s
μ
s
Storage time
t
stg
2
Fall time
t
f
0.5
Note) The part numbers in the parenthesis show conventional part number.
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
(
0.5
+0.2
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.3
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
R
Q
P
h
FE2
1
000 to 2
500
2
000 to 5
000 4
000 to 10
000
Internal Connection
B
C
E
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB0951 | For midium-speed switching |
| 2SB0951A | For midium-speed switching |
| 2SB0952 | For Low-Voltage Switching |
| 2SB0952A | For Low-Voltage Switching |
| 2SB0953 | For Low-Voltage Switching |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0950A(2SB950A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Device - Power Transistors - General-Purpose power amplification |
| 2SB0950AP | 功能描述:TRANS PNP LF 80VCEO 4A TO-220F RoHS:否 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB0950AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB0950P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
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