參數(shù)資料
型號(hào)： 2SB0968
廠商： PANASONIC CORP
元件分類： 功率晶體管
英文描述： For Low-Frequency Output Amplification
中文描述： 1.5 A, 40 V, PNP, Si, POWER TRANSISTOR
封裝： ROHS COMPLIANT, U-G1, SC-63, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 80K
代理商： 2SB0968
Power Transistors
2SB0968
(2SB968)
Silicon PNP epitaxial planar type
1
Publication date: February 2003
SJD00035AED
For low-frequency output amplification
Complementary to 2SD1295
■
Features
Possible to solder radiation fin directly to printed circuit board
High collector-emitter voltage (Base open) V
CEO
Large collector power dissipation P
C
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
40
5
1.5
3
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation (T
C
=
25
°
C)
Junction temperature
P
C
T
j
T
stg
10
W
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
1 mA, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 A
V
CE
=
5 V, I
C
=
1 mA
I
C
=
1.5 A, I
B
=
0.15 A
I
C
=
2 A, I
B
=
0.2 A
V
CE
=
5 V, I
C
=
0.5 A, f
=
200 MHz
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
50
40
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
1
100
10
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1
*
h
FE2
Forward current transfer ratio
80
220
10
Collector-emitter saturation voltage
V
CE(sat)
1
1.5
V
Base-emitter saturation voltage
V
BE(sat)
f
T
C
ob
V
Transition frequency
150
MHz
Collector output capacitance
(Common base, input open circuited)
45
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
6.5
±
0.1
5.3
±
0.1
4.35
±
0.1
2.3
±
0.1
(5.3)
(4.35)
(3.0)
(
(
0.75
±
0.1
2.3
±
0.1
4.6
±
0.1
1
1
2
3
3
2
0.5
±
0.1
1.0
±
0.1
0.1
±
0.05
0.5
±
0.1
0
1
±
0
7
±
0
1
±
0
2
±
0
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
Q
R
h
FE1
80 to 160
120 to 220
Note) Self-supported type package is also prepared.
Note) The part number in the parenthesis shows conventional part number.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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