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參數(shù)資料
| 型號(hào)： | 2SB1001-BH |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | 2SB1001-BH |
2SB1001
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–20
V
Collector to emitter voltage
V
CEO
–16
V
Emitter to base voltage
V
EBO
–6
V
Collector current
I
C
–2
A
Collector peak current
i
C(peak) *
1
–3
A
Collector power dissipation
P
C*
2
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–20
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–16
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–0.1
AV
CB = –16 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.1
AV
EB = –5 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
320
V
CE = –2 V,
I
C = –0.1 A (Pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.15
–0.3
V
I
C = –1 A,
I
B = –0.1 A (Pulse test)
Base to emitter saturation
voltage
V
BE(sat)
—
–1.0
–1.2
V
I
C = –1 A,
I
B = –0.1 A (Pulse test)
Gain bandwidth product
f
T
—
150
—
MHz
V
CE = –2 V,
I
C = –10 mA
Collector output capacitance
Cob
—
50
—
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB1001 is grouped by h
FE as follows.
Mark
BH
BJ
h
FE
100 to 200
160 to 320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1001BJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB1001BJTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1002 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1002CH | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 |
| 2SB1002CJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-243 |
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