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參數(shù)資料
| 型號(hào)： | 2SB1026 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UPAK-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | 2SB1026 |
2SB1026
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–120
—
V
IC = –10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
–100
—
V
IC = –1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
–5
—
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
—
–10
A
VCB = –100 V, IE = 0
DC current transfer ratio
hFE1
100
—
200
VCE = –5 V, IC = –150 mA
hFE2
30
—
VCE = –5 V,
IC = –500 mA (Pulse test)
Collector to emitter saturation voltage
VCE(sat)
—
–1
V
IC = –500 mA,
IB = –50 mA (Pulse test)
Base to emitter voltage
VBE
—
–0.9
V
VCE = –5 V, IC = –150 mA
Gain bandwidth product
fT
—
140
—
MHz
VCE = –5 V, IC = –150 mA
Collector output capacitance
Cob
—
20
—
pF
VCB = –10 V, IE = 0,
f = 1 MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1026DL | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-243 |
| 2SB1026DM | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-243 |
| 2SB1026DMTL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1026DMTR(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SB1027 | 制造商:KEXIN 制造商全稱(chēng):Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial |
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