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參數(shù)資料
| 型號(hào)： | 2SB1026 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UPAK-3 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | 2SB1026 |
2SB1026
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(A)
0
–2–4–6–8
–10
–1.0
–0.8
–0.6
–0.2
–0.4
IB = 0
–0.5 mA
–1
–2
–5
–10
–20
–30
–40
–60
–80
–100
–120
Typical Output Characteristics
–1
–2
–5
–10
–20
–50
–100
–200
–500
Base to Emitter Voltage VBE (V)
–0.2
–0.4
0
–0.6
–0.8
–1.0
Collector
Current
I
C
(mA)
VCE = –5 V
Pulse
Ta
=
75
°C
25
–25
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
–1
–3
–10
–30
–100 –300 –1,000
0
100
200
300
400
500
600
DC
Current
Transfer
Ratio
h
FE
Ta = 75
°C
25
–25
VCE = –5 V
Pulse
Saturation Voltage vs. Collector Current
Collector Current IC (mA)
Base
to
Emitter
Saturation
Voltage
V
BE
(sat)
(V)
Collector
to
Emitter
Saturation
Voltage
V
CE
(sat)
(V)
–1
–3
–10
–30
–100 –300 –1,000
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
IC = 10 IB
Pulse
VBE (sat)
VCE (sat)
25
75
–25
Ta = 75
°C
Ta =
–25°
C
Gain Bandwidth Product vs.
Collector Current
100
200
300
Collector Current IC (mA)
Gain
Bandwidth
Product
f
T
(MHz)
–10
–30
–100
–300
–1,000
VCE = –5 V
0
50
100
150
Ambient Temperature Ta (°C)
Collector
Power
Dissipation
P
c
(W)
(on
the
alumina
ceramic
board)
Maximum Collector Dissipation Curve
1.2
0.8
0.4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1026DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-243 |
| 2SB1026DM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-243 |
| 2SB1026DMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB1026DMTR(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SB1027 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial |
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