參數(shù)資料
型號: 2SB1050
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type(For low-frequency amplification)
中文描述: 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 37K
代理商: 2SB1050
1
Transistor
2SB1050
Silicon PNP epitaxial planer type
For low-frequency amplification
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Large collector current I
C
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
–30
–20
–7
–8
–5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –2V, I
C
= –2A
*2
I
C
= –3A, I
B
= –0.1A
*2
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
min
–20
–7
90
typ
120
max
–100
–100
625
–1
85
Unit
nA
nA
V
V
V
MHz
pF
*1
h
FE
Rank classification
Rank
P
Q
R
h
FE
90 ~ 135
120 ~ 205
180 ~ 625
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
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