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參數(shù)資料
| 型號： | 2SB1070 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Low-Voltage Switching |
| 中文描述： | 4 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | N-G1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 83K |
| 代理商： | 2SB1070 |
Power Transistors
2SB1070, 2SB1070A
Silicon PNP epitaxial planar type
1
Publication date: February 2003
SJD00040AED
For low-voltage switching
■
Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
8.5
±
0.2
3.4
±
0.3
1.0
±
0.1
0 to 0.4
6.0
±
0.2
0.8
±
0.1
R = 0.5
R = 0.5
1.0
±
0.1
0.4
±
0.1
(8.5)
(6.0)
(6.5)
1.3
(
(
2.54
±
0.3
1.4
±
0.1
5.08
±
0.5
1
2
3
1
±
0
2
±
0
1
±
0
1
+
–
3
+
–
4
±
0
4
±
1
±
0
Unit: mm
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Note) Self-supported type package is also prepared.
Rank
Q
P
h
FE2
90 to 180
130 to 260
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SB1070
V
CBO
40
50
20
40
5
4
8
V
2SB1070A
Collector-emitter voltage
(Base open)
2SB1070
V
CEO
V
2SB1070A
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
A
Peak collector current
I
CP
P
C
A
Collector power dissipation
25
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SB1070
V
CEO
I
C
=
10 mA, I
B
=
0
20
40
V
2SB1070A
Collector-base cutoff
current (Emitter open)
2SB1070
I
CBO
V
CB
=
40 V, I
E
=
0
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
2 A, I
B
=
0.1 A
I
C
=
2 A, I
B
=
0.1 A
V
CE
=
5 V, I
C
=
0.5 A, f
=
10 MHz
I
C
=
2
A
I
B1
=
0.2 A, I
B2
=
0.2 A
V
CC
=
20 V
50
50
50
μ
A
2SB1070A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1
h
FE2 *
μ
A
Forward current transfer ratio
45
90
260
Base-emitter saturation voltage
V
BE(sat)
V
CE(sat)
1.5
0.5
V
Collector-emitter saturation voltage
V
Transition frequency
f
T
150
MHz
Turn-on time
t
on
t
stg
0.3
μ
s
μ
s
μ
s
Storage time
0.4
Fall time
t
f
0.1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1070A | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial Planar Type |
| 2SB1070AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1070AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1070AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-221VAR |
| 2SB1070P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 4A I(C) | TO-221VAR |
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