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參數(shù)資料
| 型號： | 2SB1106 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 39K |
| 代理商： | 2SB1106 |
2SB1106
2
Electrical Characteristics (Ta = 25
GC)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
—
V
I
C = –25 mA, RBE = B
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
V
I
E = –50 mA, IC = 0
Collector cutoff current
I
CBO
—
–100
2AV
CB = –120 V, IE = 0
I
CEO
—
–10
2AV
CE = –100 V, RBE = B
DC current transfer ratio
h
FE
1000
—
20000
V
CE = –3 V, IC = –3 A*
1
Collector to emitter saturation
voltage
V
CE(sat)1
——–1.5
V
I
C = –3 A, IB = –6 mA*
1
V
CE(sat)2
——–3.0
V
I
C = –6 A, IB = –60 mA*
1
Base to emitter saturation
voltage
V
BE(sat)1
——–2.0
V
I
C = –3 A, IB = –6 mA*
1
V
BE(sat)2
——–3.5
V
I
C = –6 A, IB = –60 mA*
1
C to E diode forward voltage
V
D
—
3.0
V
I
D = 6 A*
1
Turn on time
t
on
—
0.5
—
2sI
C = –3 A, IB1 = –IB2 = –6 mA
Storage time
t
stg
—
3.0
—
2s
Fall time
t
f
—
1.0
—
2s
Note:
1. Pulse Test.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1106 | 6 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB1109 | 0.1 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SB1110C | 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SB1109 | 0.1 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SB1110 | 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1108 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Medium Speed Switching Complementary Pair with 2SD1608 |
| 2SB1109 | 制造商:Hitachi 功能描述:Bipolar Junction Transistor, PNP Type, TO-126 |
| 2SB1109B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1109C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1109D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
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