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參數(shù)資料
| 型號(hào)： | 2SB1109 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.1 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-126MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | 2SB1109 |
2SB1109, 2SB1110
2
Electrical Characteristics (Ta = 25
°C)
2SB1109
2SB1110
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–160 —
—
–200
—
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–160 —
—
–200
—
V
I
C = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
–5
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–10
—
AV
CB = –140 V, IE = 0
———
—
–10
AV
CE = –160 V, IE = 0
DC current tarnsfer
ratio
h
FE1*
1
60
—
320
60
—
320
V
CE = –5 V, IC = –10
mA
h
FE2
30
—
30
—
V
CE = –5 V, IC = –1 mA
Base to emitter voltage V
BE
—
–1.5
—
–1.5
V
I
C = –5 V, IC = –10 mA
Collector to emitter
saturation voltage
V
CE(sat)
——–2
—
–2
V
I
C = –30 mA, IB = –3
mA
Gain bandwidth product f
T
—
140
—
140
—
MHz
V
CE = –5 V, IC = –10
mA
Collector output
capacitance
Cob
—
5.5
—
5.5
—
pF
V
CB = –10 V, IE = 0, f =
1 MHz
Note:
1. The 2SB1109 and 2SB1110 are grouped by h
FE1 as follows.
BC
D
60 to 120
100 to 200
160 to 320
0
50
100
150
Ambient Temperature Ta (°C)
Collector
power
dissipation
Pc
(W)
0.0
1.5
1.0
Maximum Collector Dissipation Curve
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
0
Typical Output Characteristics
–20
–16
–12
–8
–4
–2
–4
–6
–8
–10
IB = 0
–10
A
–20
–30
–40
–50
–60
–70
–80
–90
–100
–110
–120
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1110C | 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SB1109 | 0.1 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SB1110 | 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SB1109D | 0.1 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SB1110 | 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1109B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1109C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1109D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1110 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
| 2SB1110B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 |
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