參數(shù)資料
型號(hào): 2SB1172Q
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 3 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, I-G1, 4 PIN
文件頁數(shù): 2/3頁
文件大小: 240K
代理商: 2SB1172Q
2SB1172, 2SB1172A
2
SJD00048AED
VCE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
IC VBE
Safe operation area
Rth t
0
160
40
120
80
5
15
10
20
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
(1)
(2)
Collector
power
dissipation
P
C
(W
)
Ambient temperature T
a (°C)
0
12
2
10
4
8
6
5
4
3
2
1
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
TC=25C
–80mA
–60mA
–40mA
–30mA
–20mA
–12mA
–8mA
–4mA
–16mA
IB=–100mA
0
2.0
1.6
1.2
0.8
0.4
0
2
4
6
10
8
TC=100C
–25C
25C
VCE=–4V
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
100
0.1
1
10
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
IC/IB=10
25C
TC=100C
–25C
0.01
0.1
1
10
1
10
102
104
103
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
VCE=–4V
TC=100C
25C
–25C
0.01
0.1
1
10
1
10
102
104
103
Transition
frequency
f
T
(MHz
)
Collector current I
C (A)
VCE=–5V
f=10MHz
TC=25C
0.01
1
0.1
1
10
100
10
100
1000
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
Non repetitive pulse
TC=25C
t=10ms
t=300ms
2SB1172A
2SB1172
t=1ms
ICP
IC
101
1
10
103
102
104
103
102
10
1
101
102
103
Time t (s)
Thermal
resistance
R
th
C/W)
(1)
(2)
(1)Without heat sink
(2)With a 50
×50×2mm Al heat sink
This product complies with the RoHS Directive (EU 2002/95/EC).
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