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參數(shù)資料
| 型號(hào)： | 2SB1188T100Q |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MPT3, SC-62, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 2SB1188T100Q |
2SB1188 / 2SB1182 / 2SB1240
Transistors
Rev.A
3/3
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
5 10 20
50 100
500 1000 2000
200
20
50
100
200
500 lC/lB=10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
Ta
=100°C
25
°C
40°C
Fig.5 Collector-emitter saturation
voltage vs. collector current ( )
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
5 10 20 50 100
500 1000 2000
200
50
100
200
500 Ta=25°C
IC/IB
=50
20
10
Fig.4 DC current gain vs.
collector current ( )
50
20
100
200
500
DC
CURRENT
GAIN
:
h
FE
VCE
= 3V
COLLECTOR CURRENT : IC
(mA)
5 10 20 50 100
500 1000 2000
200
Ta
=100°C
25
°C
25°C
Fig.7 Base-emitter saturation voltage
vs. collector current
COLLETOR CURRENT : IC
(mA)
BASE
SATURATION
VOLTAGE
:
V
BE(sat)
(V)
5 10 20 50 100
500 1000 2000
200
0.1
0.05
0.2
0.5
1
IC /IB
=10
Ta
=25°C
Fig.8 Gain bandwidth product vs.
emitter current
Ta
=25
°C
VCE
= 5V
EMITTER CURRENT : IE
(mA)
TRANSITION
FREQUENCY
:
f
T
(MHz)
5
10
20
50
100
500 1000 2000
200
50
100
200
500
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : VCB
(V)
EMITTER TO BASE VOLTAGE
: VEB
(V)
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
Ta
=25
°C
f
=1MHz
IE
=0A
IC
=0A
0.5
1
2
5
10 20 30
10
20
50
200
300
100
Cib
Cob
Fig.10 Safe operation area
(2SB1188)
0.5
0.2
0.1
1
2
10
5
20 50
0.01
0.05
0.02
0.1
0.5
0.2
1
2
5
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
DC
P
w=
100ms
P
w =
10ms
Ta
=25°C
Single
nonrepetitive
pulse
IC Max. (pulse)
Fig.11 Safe operation area
(2SB1182)
0.5
0.2
0.1
1 2
10
5
20 50
0.01
0.05
0.02
0.1
0.5
0.2
1
2
5
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta=25
°C
Single
nonrepetitive
pulse
IC Max. (Pulse)
DC
PW=500
s
PW=100ms
PW=1ms
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1188T100Q/R | 制造商:ROHM Semiconductor 功能描述:Transistor, PNP, Driver, -32V, -2A, MPT |
| 2SB1188T100R | 功能描述:兩極晶體管 - BJT PNP 32V 2A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1188-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SB1189 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEDIUM POWER TRANSISTOR(-80V, -0.7A) |
| 2SB1189_10 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium power transistor(-80V, -0.7A) |
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