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參數(shù)資料
| 型號： | 2SB1193 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Midium-Speed Power Switching |
| 中文描述： | 8 A, 120 V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 79K |
| 代理商： | 2SB1193 |
Power Transistors
2SB1193
Silicon PNP epitaxial planar type darlington
1
Publication date: February 2003
SJD00059AED
For midium-speed power switching
Complementary to 2SD1773
■
Features
High forward current transfer ratio h
FE
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
■
Absolute Maximum Ratings
T
C
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter sustaining voltage
*
V
CEO(SUS)
V
EBO
I
C
=
2 A, L
=
10 mH
I
E
=
50 mA, I
C
=
0
V
CB
=
120 V, I
E
=
0
V
CE
=
100 V, I
B
=
0
V
CE
=
3 V, I
C
=
4 A
I
C
=
4 A, I
B
=
8 mA
I
C
=
8 A, I
B
=
80 mA
I
C
=
4 A, I
B
=
8 mA
I
C
=
8 A, I
B
=
80 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
4 A, I
B1
=
8 mA, I
B2
=
8 mA
V
CC
=
50 V
120
7
V
Emitter-base voltage (Collector open)
V
Collector-base cutoff current (Emitter open)
I
CBO
100
10
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
h
FE
Forward current transfer ratio
1
000
20
000
Collector-emitter saturation voltage
V
CE(sat)1
1.5
3.0
2.0
3.5
V
V
CE(sat)2
V
BE(sat)1
Base-emitter saturation voltage
V
V
BE(sat)2
Transition frequency
f
T
t
on
15
MHz
Turn-on time
0.7
μ
s
μ
s
μ
s
Storage time
t
stg
3.5
Fall time
t
f
2.0
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
120
120
7
8
12
V
Collector-emitter voltage (Base open)
V
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
A
Peak collector current
A
Collector power dissipation
P
C
50
W
T
a
=
25
°
C
2
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55
～
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: V
CEO(SUS)
test circuit
50 Hz/60 Hz
mercury relay
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
(
0.5
+0.2
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.3
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
B
C
E
X
L
15 V
6 V
1
120
Y
G
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SB1194 | 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
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| 2SB1194Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | SOT-186 |
| 2SB1197 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Epitaxial Planar Transistor |
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