參數(shù)資料
型號: 2SB1219A
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type
中文描述: 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN
文件頁數(shù): 1/2頁
文件大小: 62K
代理商: 2SB1219A
Transistors
2SB1219, 2SB1219A
Silicon PNP epitaxial planer type
1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
20 V, I
E
=
0
I
C
=
10
μ
A, I
E
=
0
0.1
μ
A
Collector to
base voltage
2SB1219
V
CBO
30
60
25
50
5
V
2SB1219A
Collector to
emitter voltage
2SB1219
V
CEO
I
C
=
2 mA, I
B
=
0
V
2SB1219A
Emitter to base voltage
Forward current transfer ratio
*1
V
EBO
h
FE1
*2
I
E
=
10
μ
A, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0
, f
=
1 MHz
V
85
340
h
FE2
V
CE(sat)
V
BE(sat)
40
Collector to emitter saturation voltage
*1
Base to emitter saturation voltage
*1
0.35
1.1
0.6
1.5
V
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
6
15
pF
Rank
Q
R
S
No-rank
h
FE1
2SB1219
85 to 170
120 to 240
170 to 340
85 to 340
Marking
symbol
CQ
CR
CS
C
2SB1219A
DQ
DR
DS
D
For general amplification
Complementary to 2SD1820 and 2SD1820A
I
Features
Large collector current I
C
S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to
base voltage
2SB1219
V
CBO
30
60
25
50
5
1
500
V
2SB1219A
Collector to
emitter voltage
2SB1219
V
CEO
V
2SB1219A
Emitter to base voltage
V
EBO
I
CP
V
Peak collector current
A
Collector current
I
C
P
C
T
j
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note)*1: Pulse measurement
*2: Rank classification
Marking Symbol
2SB1219 :
C
2SB1219A:
D
2
±
1.3
±0.1
0.3
+0.1
2.0
±0.2
1
±
(
1
3
2
(0.65) (0.65)
0
±
0
±
0
0
+
0.15
+0.10
5
°
10
°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
Product of no-rank is not classi-
fied and have no indication for
rank.
相關(guān)PDF資料
PDF描述
2SB1220 Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
2SB1221 Silicon PNP epitaxial planer type
2SB1252 Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1253 Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1254 Silicon PNP epitaxial planar type Darlington(For power amplification)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1219AQR 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1219ASL 功能描述:TRANS PNP GP AMP 50VCEO SMINI 3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SB1219GSL 功能描述:TRANS PNP 25VCEO 500MA SMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SB1220 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB12200RL 功能描述:TRANS PNP 150VCEO 50MA SMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR