參數(shù)資料
型號: 2SB1253
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type Darlington(For power amplification)
中文描述: 6 A, 110 V, PNP, Si, POWER TRANSISTOR
封裝: TOP3, FULL PACK-3
文件頁數(shù): 1/3頁
文件大?。?/td> 74K
代理商: 2SB1253
1
Power Transistors
2SB1253
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1893
I
Features
G
Optimum for 40W HiFi output
G
High foward current transfer ratio h
FE
: 5000 to 30000
G
Low collector to emitter saturation voltage V
CE(sat)
: < –2.5V
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–130
–110
–5
–10
–6
50
3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –130V, I
E
= 0
V
CE
= –110V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –5V, I
C
= –1A
V
CE
= –5V, I
C
= –5A
I
C
= –5A, I
B
= –5mA
I
C
= –5A, I
B
= –5mA
V
CE
= –10V, I
C
= – 0.5A, f = 1MHz
I
C
= –5A, I
B1
= –5mA, I
B2
= 5mA,
V
CC
= –50V
min
–110
2000
5000
typ
20
0.9
2.5
1.7
max
–100
–100
–100
30000
–2.5
–3.0
Unit
μ
A
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
T
C
=25
°
C
Ta=25
°
C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
B
C
E
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
5000 to 15000 8000 to 30000
15.0
±
0.3
11.0
±
0.2
2
±
0
1
±
0
1
S
3
0
1
±
0
5.0
±
0.2
3.2
10.9
±
0.5
5.45
±
0.3
3
2
1
1.1
±
0.1
2.0
±
0.2
0.6
±
0.2
2.0
±
0.1
φ
3.2
±
0.1
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