參數(shù)資料
型號: 2SB1240TV2R
元件分類: 小信號晶體管
英文描述: 2000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ATV, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 147K
代理商: 2SB1240TV2R
2/3
www.rohm.com
c
2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.C
Data Sheet
2SB1182 / 2SB1240
Packaging specifications and hFE
Package
Code
Basic ordering unit (pieces)
Taping
TL
2500
hFE
QR
2SB1182
TV2
2500
QR
2SB1240
Type
hFE values are classified as follows :
Item
hFE
Q
120 to 270
R
180 to 390
Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
BASE TO EMITTER VOLTAGE : VBE
(V)
COLLECTOR
CURRENT
:
I
C
(mA)
0
0.2
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.4
1
2
5
10
20
50
100
200
500
1000
VCE
= 3V
Ta
=100°C
25
°C
40°C
Fig.2 Grounded emitter output
characteristics
0.4
0
0.8
1.2
1.6
2
0
0.1
0.2
0.3
0.4
0.5
IB
=0A
250μA
500μA
750μA
1mA
1.25mA
1.5mA
1.75mA
2mA
2.25mA
2.5mA
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta
=25°C
Fig.3 DC current gain vs.
collector curren ( )
DC
CURRENT
GAIN
:
h
FE
5 10 20 50 100
500 1000 2000
200
50
20
100
200
500
Ta
=25°C
COLLECTOR CURRENT : IC
(mA)
VCE
= 6V
3V
1V
Fig.4 DC current gain vs.
collector current ( )
50
20
100
200
500
DC
CURRENT
GAIN
:
h
FE
VCE
= 3V
COLLECTOR CURRENT : IC
(mA)
5 10 20 50 100
500 1000 2000
200
Ta
=100°C
25
°C
25°C
Fig.5 Collector-emitter saturation
voltage vs. collector current ( )
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
5 10 20 50 100
500 1000 2000
200
50
100
200
500 Ta=25°C
IC/IB
=50
20
10
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
5 10 20
50 100
500 1000 2000
200
20
50
100
200
500 lC/lB=10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC
(mA)
Ta
=100°C
25
°C
40°C
Fig.7 Base-emitter saturation voltage
vs. collector current
COLLETOR CURRENT : IC
(mA)
BASE
SATURATION
VOLTAGE
:
V
BE(sat)
(V)
5 10 20 50 100
500 1000 2000
200
0.1
0.05
0.2
0.5
1
IC /IB
=10
Ta
=25°C
Fig.8 Gain bandwidth product vs.
emitter current
Ta
=25
°C
VCE
= 5V
EMITTER CURRENT : IE
(mA)
TRANSITION
FREQUENCY
:
f
T
(MHz)
5
10
20
50
100
500 1000 2000
200
50
100
200
500
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : VCB
(V)
EMITTER TO BASE VOLTAGE
: VEB
(V)
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(p
F)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF
)
Ta
=25
°C
f
=1MHz
IE
=0A
IC
=0A
0.5
1
2
5
10 20 30
10
20
50
200
300
100
Cib
Cob
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