參數(shù)資料
型號(hào): 2SB1252
廠商: PANASONIC CORP
元件分類(lèi): 功率晶體管
英文描述: Silicon PNP epitaxial planar type Darlington(For power amplification)
中文描述: 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: ROHS COMPLIANT, TO-220F-A1, SC-67, FULL PACK-3
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 75K
代理商: 2SB1252
2
Power Transistors
2SB1252
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
60
50
40
30
20
10
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
C
C
0
–12
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
T
C
=25C
– 0.1mA
– 0.2mA
– 0.3mA
– 0.4mA
I
B
=– 0.5mA
Collector to emitter voltage V
CE
(V)
C
C
– 0.1
–1
–10
–100
– 0.3
Collector current I
C
(A)
–3
–30
– 0.1
–100
–10
–1
– 0.3
–3
–30
I
C
/I
B
=1000
25C
–25C
T
C
=100C
C
C
– 0.1
–1
–10
–100
– 0.3
Collector current I
C
(A)
–3
–30
– 0.1
–100
–10
–1
– 0.3
–3
–30
I
C
/I
B
=1000
T
C
=–25C
25C
100C
B
B
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=5V
T
C
=100C
25C
–25C
F
F
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
1
1000
100
10
3
30
300
I
=0
f=1MHz
T
C
=25C
C
o
0
–8
–2
–6
–4
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=1000
(–I
B1
=I
)
V
CC
=–50V
T
C
=25C
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
t=1ms
I
CP
I
C
10ms
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
C
C
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