參數(shù)資料
型號(hào): 2SB1253
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type Darlington(For power amplification)
中文描述: 6 A, 110 V, PNP, Si, POWER TRANSISTOR
封裝: TOP3, FULL PACK-3
文件頁數(shù): 3/3頁
文件大小: 74K
代理商: 2SB1253
3
Power Transistors
2SB1253
R
th(t)
— t
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
0.1
1
10
100
10000
1000
Note: R
was measured at Ta=25C and under natural convection.
(1) P
T
=10V
×
0.2A (2W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
(1)
(2)
Time t (s)
T
t
(
相關(guān)PDF資料
PDF描述
2SB1254 Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1255 Silicon PNP epitaxial planar type Darlington(For power amplification)
2SB1282 Darlington Transistor(【 4A PNP)
2SB1283 Darlington Transistor(-7A PNP)
2SB1284 Darlington Transistor(-10A PNP)
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