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參數(shù)資料
| 型號(hào)： | 2SB1361 |
| 廠(chǎng)商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon PNP triple diffusion planar type(For high power amplification) |
| 中文描述： | 9 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | SC-92, TOP-3F-A1, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 2SB1361 |
1
Power Transistors
2SB1361
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2052
I
Features
G
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
G
Wide area of safe operation (ASO)
G
High transition frequency f
T
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–150
–150
–5
–15
–9
100
3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE1
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –150V, I
E
= 0
V
EB
= –3V, I
C
= 0
V
CE
= –5V, I
C
= –20mA
V
CE
= –5V, I
C
= –1A
V
CE
= –5V, I
C
= –7A
V
CE
= –5V, I
C
= –7A
I
C
= –7A, I
B
= – 0.7A
V
CE
= –5V, I
C
= – 0.5A, f = 1MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
20
60
20
typ
15
270
max
–50
–50
200
–1.8
–2.0
Unit
μ
A
μ
A
V
V
MHz
pF
T
C
=25
°
C
Ta=25
°
C
*
h
FE2
Rank classification
Rank
Q
S
P
h
FE2
60 to 120
80 to 160
100 to 200
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0
±
0.3
11.0
±
0.2
2
±
0
1
±
0
1
S
3
0
1
±
0
5.0
±
0.2
3.2
10.9
±
0.5
5.45
±
0.3
3
2
1
1.1
±
0.1
2.0
±
0.2
0.6
±
0.2
2.0
±
0.1
φ
3.2
±
0.1
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