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參數(shù)資料
| 型號： | 2SB1361 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP triple diffusion planar type(For high power amplification) |
| 中文描述： | 9 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | SC-92, TOP-3F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SB1361 |
2
Power Transistors
2SB1361
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
120
100
80
60
40
20
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
C
0
–12
–10
–8
–2
–6
–4
0
–12
–10
–8
–6
–4
–2
T
C
=25C
–200mA
–150mA
–100mA
–80mA
–60mA
–40mA
–20mA
–10mA
I
B
=–300mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
–3
–2
–1
0
–12
–10
–8
–6
–4
–2
V
CE
=–5V
T
C
=–25C
100C
25C
C
C
– 0.1
–1
–10
–100
– 0.3
Collector current I
C
(A)
–3
–30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
25C
T
C
=100C
–25C
C
C
1
–1
–10
–100
– 0.3
Collector current I
C
(A)
–3
–30
1000
100
10
3
30
300
V
CE
=–5V
T
C
=100C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
1000
100
10
3
30
300
V
=–5V
f=1MHz
T
C
=25C
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
10
10000
1000
100
30
300
3000
I
=0
f=1MHz
T
C
=25C
C
o
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
t=10ms
100ms
I
CP
I
C
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
C
C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SB1366 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR 2-10L1A-60V -3A 25W BCE |
| 2SB1367 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR2-10L1A -100V -5A 30W BCE |
| 2SB1368 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR 2-10L1A-80V -4A 25W BCE |
| 2SB1369 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB -60V -3A 40W BCE |
| 2SB1375 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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