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參數(shù)資料
| 型號(hào)： | 2SB1373 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | SC-65, TOP-3, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 170K |
| 代理商： | 2SB1373 |
1
Power Transistors
2SB1373
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2066
s Features
q
Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
q
Wide area of safe operation (ASO)
q
High transition frequency fT
q
Optimum for the output stage of a HiFi audio amplifier
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–160
–5
–20
–12
120
2.5
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
*
hFE3
VBE
VCE(sat)
fT
Cob
Conditions
VCB = –160V, IE = 0
VEB = –3V, IC = 0
VCE = –5V, IC = –20mA
VCE = –5V, IC = –1A
VCE = –5V, IC = –8A
IC = –8A, IB = – 0.8A
VCE = –5V, IC = – 0.5A, f = 1MHz
VCB = –10V, IE = 0, f = 1MHz
min
20
60
20
typ
15
400
max
–50
200
–1.8
–2.0
Unit
A
V
MHz
pF
TC=25°C
Ta=25
°C
*h
FE2 Rank classification
Rank
Q
S
P
hFE2
60 to 120
80 to 160
100 to 200
Unit: mm
4.5
±0.2
15.0
±0.5
13.0
±0.5
20.0
±0.3
19.0
±0.3
15.0
±0.2
Solder
Dip
4.0
±0.1
4.0
±0.1
12.5
3.5
16.2
±0.5
10.5
±0.5
10.9
±0.5
5.45
±0.3
1.1
±0.1
φ3.2±0.1
2.0
±0.2
2.0
±0.1
1.4
±0.3
0.6
±0.2
123
1:Base
2:Collector
3:Emitter
EIAJ:SC–65(a)
TOP–3 Package(a)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1373S | 12 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SB1373P | 12 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SB1381 | 5 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SB1386-R-TP | 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1387TZ | 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1375 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1375(F) | 制造商:Toshiba 功能描述:PNP -60V -3A 100 to 320 TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP 60V 3A TO220NIS 制造商:Toshiba 功能描述:Trans GP BJT PNP 60V 3A 3-Pin(3+Tab) TO-220NIS |
| 2SB1375,CLARIONF(M | 功能描述:TRANS PNP 3A 60V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態(tài):停產(chǎn) 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:3A 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:1.5V @ 200mA，2A 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:100 @ 500mA，5V 功率 - 最大值:2W 頻率 - 躍遷:9MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商器件封裝:TO-220NIS 標(biāo)準(zhǔn)包裝:1 |
| 2SB1378 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1381(Q) | 制造商:Toshiba 功能描述:PNP Cut Tape |
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