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參數(shù)資料
| 型號： | 2SB1386G-Q-AB3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 173K |
| 代理商： | 2SB1386G-Q-AB3-R |
2SB1386
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
www.unisonic.com.tw
QW-R208-019,C
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current (DC)
IC(DC)
-5
A
Collector Current (Pulse)(Note1)
IC(PULSE)
-10
A
Collector Power Dissipation
PC
0.5
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note 1. Single pulse, Pw=10ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Base Breakdown Voltage
BVCBO
IC= -50μA
-30
V
Collector Emitter Breakdown Voltage
BVCEO
IC= -1mA
-20
V
Emitter Base Breakdown Voltage
BVEBO
IE= -50μA
-6
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC/IB= -4A/-0.1A
-1.0
V
Collector Cut-off Current
ICBO
VCB= -20V
-0.5
μA
Emitter Cut-off Current
IEBO
VEB= -5V
-0.5
μA
DC Current Gain
hFE
VCE= -2V, IC= -0.5A
82
390
Transition Frequency
fT
VCE= -6V, IE= 50mA, f=30MHz
120
MHz
Output Capacitance
Cob
VCB= -20V, IE= 0A, f=1MHz
60
pF
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82-180
120-270
180-390
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